<Major specifications>
|
TME-550P |
TME-750P |
TME-950P |
Exposure
method |
Proximity |
Resolution |
7 microns L&S
(Different corresponding to the conditions) |
Available
substrate size |
Max. 400 X 500
mm |
Max. 650 X 750
mm |
Max. 730 X 920
mm |
Available
mask
size |
Max. 450 X 550
mm |
Max. 700 X 800
mm |
Max. 800 X 960
mm |
Illumination
(365 nm) |
30 mW / cm2
(5 kW ultra-high-voltage mercury lamp) |
25 mW / cm2
(8 kW ultra-high-voltage mercury lamp) |
23 mW / cm2
(10 kW ultra-high-voltage mercury lamp) |
Illumination
unevenness |
3.0% or less |
Overlay
accuracy |
±1.0 microns |
Gap
setting range |
50 to 300 microns |
70 to 300 microns |
Gap
setting
accuracy |
±5 microns |
Processing
capacity |
18 sec/piece
or shorter
(except for the exposure time) |
18 sec/piece
or shorter
(except for the exposure time) |
20 sec/piece
or shorter
(except for the exposure time) |
Mask
setting |
Automatic |
Dimensions
of the system main unit |
3600(W)
X 2500(D) X 2600(H) mm |
3600(W)
X 3000(D) X 2950(H) mm |
4200(W)
X 3500(D) X 3300(H) mm |
Weight
of the system main unit |
Approx. 4000
kg |
Approx. 4000
kg |
Approx. 5000
kg |
Power
supply |
3-phase 200 V,
50/60 Hz |