<Major specifications>
|
TME-400R |
TME-150R |
Exposure
method |
Proximity |
Resolution |
Proximity: 7 micronsL&S
Soft contact: 3 micronsL&S
(Different corresponding to the conditions) |
Proximity: 6 micronsL&S
Soft contact: 2 micronsL&S
Hard contact: 0.5 micronsL&S
(Different corresponding to the conditions) |
Available
substrate size |
Max. 300 X 400
mm |
50 to 200 mm
dia.
40 X 40 to 150 X 150 mm |
Available
mask size |
Max. 340 X 440 mm |
250 X 250 mm recommended |
Illumination
unevenness |
5.0% or less |
Overlay
accuracy |
±1.0 microns(with
the automatic alignment used) |
Gap setting
range |
0 to 500 microns |
0 to 999 microns |
Mask setting |
Manual |
Dimensions
of the system main unit |
2900(W) X 2300(D) X 1950(H)
mm |
1200(W) X 1200(D) X 1700(H)
mm |
Weight
of the system main unit |
Approx. 4000 kg |
Approx. 600 kg |
Power supply |
3-phase 200 V, 50/60 Hz |
3-phase 100 V or 200 V, 50/60
Hz |